Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy
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- Lin Wang
- Université de Lyon 1 Institut des Nanotechnologies de Lyon (INL), , CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue, Jean Capelle, 69621 Villeurbanne, France
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- Vincent Sallet
- CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay 2 Groupe d'étude de la Matière Condensée (GEMaC), , 45 Avenue des Etats-Unis, 78035 Versailles, France
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- Corinne Sartel
- CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay 2 Groupe d'étude de la Matière Condensée (GEMaC), , 45 Avenue des Etats-Unis, 78035 Versailles, France
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- Georges Brémond
- Université de Lyon 1 Institut des Nanotechnologies de Lyon (INL), , CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue, Jean Capelle, 69621 Villeurbanne, France
説明
<jats:p>ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effect as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 109 (9), 2016-08-29
AIP Publishing
