Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process
-
- Jihye Kang
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea
-
- Dongsu Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea
-
- Donghun Lee
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea
-
- Masao Kamiko
- Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan
-
- Sung-Jin Kim
- College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea
-
- Sang-Kwon Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Korea
-
- Jung-Hyuk Koh
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Korea
抄録
<jats:p>In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO<jats:sub>2</jats:sub> laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.</jats:p>
収録刊行物
-
- Journal of Nanoscience and Nanotechnology
-
Journal of Nanoscience and Nanotechnology 21 (3), 1971-1977, 2021-03-01
American Scientific Publishers