Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure

DOI PDF 2 Citations
  • Z. L. Liau
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
  • S. C. Palmateer
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
  • S. H. Groves
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
  • J. N. Walpole
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108
  • L. J. Missaggia
    Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108

Bibliographic Information

Published
1992-01-06
DOI
  • 10.1063/1.107377
Publisher
AIP Publishing

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<jats:p>Buried-heterostructure quantum-well lasers fabricated by mass transport are reported for In0.18Ga0.82As/GaAs/Ga0.5In0.5P strained-layer structures grown by atmospheric pressure organometallic vapor-phase epitaxy. Threshold current densities as low as 85 A/cm2 are measured for broad-stripe lasers, and buried-stripe devices show threshold currents as low as 3 mA and differential quantum efficiencies as high as 34% per facet without coatings.</jats:p>

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