Microscopic observation of precursor-mediated adsorption process of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NH</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>4</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>using STM

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Adsorption process of ${\mathrm{NH}}_{3}$ on $\mathrm{Si}(100)c(4\ifmmode\times\else\texttimes\fi{}2)$ has been studied using scanning tunneling microscopy (STM) at 65 K. The dissociated species of ${\mathrm{NH}}_{3}$ are adsorbed on the same dimer, since the depression on a dimer site is observed in the STM image. A small amount of molecular precursor species of ${\mathrm{NH}}_{3}$ are observed as bright protrusions. The precursor species undergo dissociative chemisorption upon interaction with another mobile molecule, resulting in the depression on two adjacent dimers. The reactivity of the dimer adjacent to the already reacted dimer is largely enhanced resulting in the formation of two-dimensional islands of dissociated species. The C defect is found to be an active site for the dissociation of ${\mathrm{NH}}_{3}.$

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  • Physical Review B

    Physical Review B 68 (23), 235322-, 2003-12-18

    American Physical Society (APS)

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