Evidence of atomic-scale arsenic clustering in highly doped silicon

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  • S. Duguay
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • F. Vurpillot
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • T. Philippe
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • E. Cadel
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • R. Lardé
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • B. Deconihout
    Université et INSA de Rouen 1 GPM, , UMR CNRS 6634, BP 12, Av. de l’Université, 76801 Saint Etienne du Rouvray, France
  • G. Servanton
    STMicroelectronics 2 , 850 Rue Jean Monnet, F-38926 Crolles, France
  • R. Pantel
    STMicroelectronics 2 , 850 Rue Jean Monnet, F-38926 Crolles, France

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<jats:p>Low temperature (675 °C) epitaxial in situ doped Si layers (As, 1.5 at. %) were analyzed by atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer. The spatial distribution of As atoms in this layer was obtained by APT, and the distance distribution between first nearest neighbors between As atoms was studied. The result shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) with a high number density and contain more than 60% of the total number of As atoms.</jats:p>

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