Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions
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- Satoshi Takahashi
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Masahide Tona
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Kazuo Nagata
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Nobuyuki Nakamura
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Nobuo Yoshiyasu
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Chikashi Yamada
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Shunsuke Ohtani
- University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
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- Makoto Sakurai
- Kobe University Department of Physics, , Kobe, Hyogo 657-8501, Japan
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説明
<jats:p>The emission of sputtered ions from a hydrogen-terminated Si(111) 1×1 surface has been measured for impact of slow (v<0.25vBohr) highly charged Xe ions. Proton sputtering yields increase strongly with projectile charge q (qγ;γ∼4) and reach to the value greater than one for Xeq+ impact (q≧44). Yields of Si+ remain constant (∼0.1) for lower q (14≦q≦29) but increase with q for higher q region which shows that the apparent Coulomb explosion-like potential sputtering might set in and enhances the sputtering yield drastically over q=29.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 87 (6), 2005-08-03
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1363107370422210816
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- OpenAIRE