Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions

  • Satoshi Takahashi
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Masahide Tona
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Kazuo Nagata
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Nobuyuki Nakamura
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Nobuo Yoshiyasu
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Chikashi Yamada
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Shunsuke Ohtani
    University of Electro-Communications Institute for Laser Science and Department of Applied Physics and Chemistry, , Chofu, Tokyo 182-8585, Japan
  • Makoto Sakurai
    Kobe University Department of Physics, , Kobe, Hyogo 657-8501, Japan

この論文をさがす

説明

<jats:p>The emission of sputtered ions from a hydrogen-terminated Si(111) 1×1 surface has been measured for impact of slow (v&lt;0.25vBohr) highly charged Xe ions. Proton sputtering yields increase strongly with projectile charge q (qγ;γ∼4) and reach to the value greater than one for Xeq+ impact (q≧44). Yields of Si+ remain constant (∼0.1) for lower q (14≦q≦29) but increase with q for higher q region which shows that the apparent Coulomb explosion-like potential sputtering might set in and enhances the sputtering yield drastically over q=29.</jats:p>

収録刊行物

被引用文献 (1)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ