Raman scattering in (Al<i>x</i>Ga1−<i>x</i>)0.51In0.49P quaternary alloys

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  • Minoru Kubo
    Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., 3-15 Yagumo-nakamachi, Moriguchi-shi, Osaka 570, Japan
  • Masaya Mannoh
    Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., 3-15 Yagumo-nakamachi, Moriguchi-shi, Osaka 570, Japan
  • Yasuhito Takahashi
    Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., 3-15 Yagumo-nakamachi, Moriguchi-shi, Osaka 570, Japan
  • Mototsugu Ogura
    Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., 3-15 Yagumo-nakamachi, Moriguchi-shi, Osaka 570, Japan

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<jats:p>We report a Raman study of the phonon mode of (AlxGa1−x)0.51In0.49P quaternary alloys lattice matched to GaAs over the whole range of compositions. From the composition dependence of spectra it has been confirmed that the three-mode behavior of the alloy corresponding to the three binary compositions: AlP-, GaP-, and InP-like phonon modes may occur.</jats:p>

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