Flexible image sensor array with bulk heterojunction organic photodiode
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- Tse Nga Ng
- Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
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- William S. Wong
- Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
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- Michael L. Chabinyc
- Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
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- Sanjiv Sambandan
- Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
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- Robert A. Street
- Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
Description
<jats:p>Thick organic bulk heterojunction photodiodes with low dark current <1nA∕cm2 and efficient charge collection are reported. An electric field >1V∕μm is sufficient to achieve >75% charge collection in films of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] and [6,6]-phenyl-C61-butyric acid methyl ester blends up to 4μm thick, and the rate of photocurrent decay is reduced at saturation fields. The integration of a 4μm thick sensor layer onto a flexible amorphous silicon thin-film transistor backplane gave an image sensor array with 35% external quantum efficiency and noise equivalent power of 30pW∕cm2 at reverse bias voltage of −4V.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 92 (21), 213303-, 2008-05-26
AIP Publishing
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Details 詳細情報について
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- CRID
- 1363107371030749952
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref