Flexible image sensor array with bulk heterojunction organic photodiode

  • Tse Nga Ng
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
  • William S. Wong
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
  • Michael L. Chabinyc
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
  • Sanjiv Sambandan
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA
  • Robert A. Street
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94306, USA

Description

<jats:p>Thick organic bulk heterojunction photodiodes with low dark current &lt;1nA∕cm2 and efficient charge collection are reported. An electric field &gt;1V∕μm is sufficient to achieve &gt;75% charge collection in films of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] and [6,6]-phenyl-C61-butyric acid methyl ester blends up to 4μm thick, and the rate of photocurrent decay is reduced at saturation fields. The integration of a 4μm thick sensor layer onto a flexible amorphous silicon thin-film transistor backplane gave an image sensor array with 35% external quantum efficiency and noise equivalent power of 30pW∕cm2 at reverse bias voltage of −4V.</jats:p>

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