A top-emission organic light-emitting diode with a silicon anode and an Sm∕Au cathode
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- G. G. Qin
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China and , Shenyang 110015, China
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- A. G. Xu
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- G. L. Ma
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- G. Z. Ran
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- Y. P. Qiao
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- B. R. Zhang
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- W. X. Chen
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
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- S. K. Wu
- School of Physics, State Key Laboratory for Mesoscopic, Peking University , Beijing 100871, China
書誌事項
- 公開日
- 2004-11-29
- DOI
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- 10.1063/1.1823601
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A top-emission organic light-emitting diode (TEOLED) with a p-type silicon anode and a semitransparent samarium/gold cathode has been constructed and studied. With a structure of Al∕p-Si∕SiOx∕N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine(NPB)∕Tris-(8-hydroxyquinoline)aluminum(Alq)∕LiF∕Al, we have found that compared to indium-tin-oxide, the p-Si anode enhances the unbalance between electron- and hole-injection, which is a disadvantage factor for the light-emitting efficiency of the TEOLED. Selecting p-Si wafers with suitable electric resistivities and inserting an ultrathin low temperature grown SiOx layer of about 1.5nm between the anode and NPB can effectively restrict hole-injection. Moreover, a low work function Sm∕Au cathode was used to enhance electron-injection. The electroluminescence efficiency of the TEOLED depends on the thickness of the Sm layer in the cathode. A current efficiency of 0.55cd∕A and a power efficiency of 0.07lm∕W have been reached.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 85 (22), 5406-5408, 2004-11-29
AIP Publishing
