Demonstration of a Broadband Photodetector Based on a Two‐Dimensional Metal–Organic Framework

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  • Himani Arora
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany
  • Renhao Dong
    Faculty of Chemistry and Food Chemistry and Center for Advancing Electronics Dresden Technische Universität Dresden Dresden 01062 Germany
  • Tommaso Venanzi
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany
  • Jens Zscharschuch
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany
  • Harald Schneider
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany
  • Manfred Helm
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany
  • Xinliang Feng
    Faculty of Chemistry and Food Chemistry and Center for Advancing Electronics Dresden Technische Universität Dresden Dresden 01062 Germany
  • Enrique Cánovas
    Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia) Madrid 28049 Spain
  • Artur Erbe
    Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Dresden 01328 Germany

Bibliographic Information

Published
2020-01-23
Rights Information
  • http://creativecommons.org/licenses/by/4.0/
DOI
  • 10.1002/adma.201907063
Publisher
Wiley

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<jats:title>Abstract</jats:title><jats:p>Metal–organic frameworks (MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Yet, the realization of their proof‐of‐concept devices remains a daunting challenge, attributed to their poor electrical properties. Following recent work on a semiconducting Fe<jats:sub>3</jats:sub>(THT)<jats:sub>2</jats:sub>(NH<jats:sub>4</jats:sub>)<jats:sub>3</jats:sub> (THT: 2,3,6,7,10,11‐triphenylenehexathiol) 2D MOF with record‐high mobility and band‐like charge transport, here, an Fe<jats:sub>3</jats:sub>(THT)<jats:sub>2</jats:sub>(NH<jats:sub>4</jats:sub>)<jats:sub>3</jats:sub> MOF‐based photodetector operating in photoconductive mode capable of detecting a broad wavelength range from UV to NIR (400–1575 nm) is demonstrated. The narrow IR bandgap of the active layer (≈0.45 eV) constrains the performance of the photodetector at room temperature by band‐to‐band thermal excitation of charge carriers. At 77 K, the device performance is significantly improved; two orders of magnitude higher voltage responsivity, lower noise equivalent power, and higher specific detectivity of 7 × 10<jats:sup>8</jats:sup> cm Hz<jats:sup>1/2</jats:sup> W<jats:sup>−1</jats:sup> are achieved under 785 nm excitation. These figures of merit are retained over the analyzed spectral region (400–1575 nm) and are commensurate to those obtained with the first demonstrations of graphene‐ and black‐phosphorus‐based photodetectors. This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials' synthesis and technological applications.</jats:p>

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