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- Winfried Mönch
- Department of Physics, Universität Duisburg-Essen , 47048 Duisburg, Germany
書誌事項
- 公開日
- 2005-03-14
- DOI
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- 10.1063/1.1866641
- 公開者
- AIP Publishing
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説明
<jats:p>The interface-induced gap states (IFIGS) are the fundamental mechanism which determines the band structure lineup at semiconductor interfaces. The valence-band offsets of semiconductor heterostructures and the barrier heights of Schottky contacts are given by the branch-point energies of the IFIGS of the semiconductors and respective electric-dipole terms. The branch-point energies of SiO2, Si3N4, and of the high-κ dielectrics Al2O3, HfO2, and ZrO2 are determined as 3.99±0.10, 1.93±0.14, 3.23±0.42, 2.62±0.18, and ≈3.2eV, respectively, from experimental valence-band offsets of heterostructures of these insulators.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 86 (12), 122101-, 2005-03-14
AIP Publishing