Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
Journal
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 33 (6), 827-829, 2012-06
Institute of Electrical and Electronics Engineers (IEEE)
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Details 詳細情報について
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- CRID
- 1363388843918814592
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- ISSN
- 15580563
- 07413106
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- Data Source
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- Crossref