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- Elvira M. C. Fortunato
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- Pedro M. C. Barquinha
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- Ana C. M. B. G. Pimentel
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- Alexandra M. F. Gonçalves
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- António J. S. Marques
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- Rodrigo F. P. Martins
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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- Luis M.N. Pereira
- Department of Materials Science/CENIMAT , Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
書誌事項
- 公開日
- 2004-09-27
- DOI
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- 10.1063/1.1790587
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 85 (13), 2541-2543, 2004-09-27
AIP Publishing