Stimulated emission in strained-layer quantum-well heterostructures

DOI PDF 被引用文献2件
  • M. D. Camras
    Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • J. M. Brown
    Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • N. Holonyak
    Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • M. A. Nixon
    Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • R. W. Kaliski
    Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • M. J. Ludowise
    Corporate Solid State Laboratory, Varian Associates, Incorporated, Palo Alto, California 94303
  • W. T. Dietze
    Corporate Solid State Laboratory, Varian Associates, Incorporated, Palo Alto, California 94303
  • C. R. Lewis
    Corporate Solid State Laboratory, Varian Associates, Incorporated, Palo Alto, California 94303

書誌事項

公開日
1983-11-01
DOI
  • 10.1063/1.331932
公開者
AIP Publishing

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説明

<jats:p>Stimulated emission data are presented on a large variety of strained-layer quantum-well heterostructures (QWH’s) and superlattices (SL’s) grown by metalorganic chemical vapor deposition (MOCVD). These structures consist of barrier-well combinations of thickness LB,Lz ≲150 Å made from GaAs-InGaAs, GaAsP-GaAs, and GaAsP-InGaAs. Also employed are higher band-gap confining layers of InxAlyGa1-x-yAs, AlyGa1−yAs1−xPx, and AlxGa1−xAs. All of the heterostructures are grown on a GaAs substrate with and, in some cases, without a graded layer. The strain range between 0.2 to 12.5×10−3 is examined. Photopumped, these heterostructures operate as continuous (cw) 300 K lasers, with thresholds of 1.6–7.5×103 W/cm2, for periods of time between 0.5 to &gt;35 min. Under high-level excitation, the equivalent of Jeq∼103 A/cm2, laser operation fails or is quenched by networks of dislocations (with 〈110〉 Burger’s vectors) that are generated within the strained-layer region of the QWH’s or SL’s. These dislocation networks, which are revealed via transmission electron microscopy (TEM), occur at a more rapid rate in higher threshold samples and ones with higher built-in strain. The TEM data show, however, that no heterointerface defects (dislocations) are present in the as-grown strained-layer regions but are present in thick (bulk) graded regions.</jats:p>

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