Graphene field-effect transistors based on boron nitride gate dielectrics

DOI PDF 3 Citations

Journal

2010 International Electron Devices Meeting

2010 International Electron Devices Meeting 2010 23.2.1-23.2.4, 2010-12

IEEE

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Details 詳細情報について

CRID

1363388844188251008
DOI

10.1109/iedm.2010.5703419
Web Site

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703419.pdf?arnumber=5703419
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