Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging
書誌事項
- 公開日
- 2019-10-24
- 権利情報
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- https://link.aps.org/licenses/aps-default-license
- https://link.aps.org/licenses/aps-default-accepted-manuscript-license
- DOI
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- 10.1103/physrevlett.123.177201
- 10.25358/openscience-18
- 10.48550/arxiv.1810.11326
- 公開者
- American Physical Society (APS)
この論文をさがす
説明
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
26 pages, including supplementary material
収録刊行物
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- Physical Review Letters
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Physical Review Letters 123 (17), 177201-, 2019-10-24
American Physical Society (APS)
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詳細情報 詳細情報について
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- CRID
- 1363388844280267136
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- ISSN
- 10797114
- 00319007
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- HANDLE
- 20.500.12030/20
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- PubMed
- 31702247
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- データソース種別
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- Crossref
- OpenAIRE