Temperature dependence of threshold current for quantum-well Al<i>x</i>Ga1−<i>x</i>As-GaAs heterostructure laser diodes

DOI PDF 被引用文献9件
  • R. Chin
    Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • N. Holonyak
    Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • B. A. Vojak
    Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • K. Hess
    Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • R. D. Dupuis
    Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
  • P. D. Dapkus
    Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803

書誌事項

公開日
1980-01-01
DOI
  • 10.1063/1.91290
公開者
AIP Publishing

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説明

<jats:p>Data are presented showing that the threshold current density Jth(T) of quantum-well AlxGa1−xAs-GaAs heterostructure laser diodes, grown by MO-CVD, is less temperature dependent than that of conventional DH lasers. T0 in the usual expression Jth∝exp(T/T0) can be high as 437 °C. This behavior is explained in terms of the steplike density of states and the disturbed electron and phonon distribution functions of the quantum-well active region.</jats:p>

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