Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

詳細情報 詳細情報について

• CRID

  1363388844499503744

• DOI

  10.1007/s11664-007-0313-3

• ISSN

  1543186X

  03615235

• Web Site

  http://link.springer.com/content/pdf/10.1007/s11664-007-0313-3.pdf

  http://link.springer.com/article/10.1007/s11664-007-0313-3/fulltext.html

  http://link.springer.com/content/pdf/10.1007/s11664-007-0313-3

• データソース種別

  • Crossref