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- Liangcai Wu
- Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, , Shanghai 200050, People’s Republic of China
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- Zhitang Song
- Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, , Shanghai 200050, People’s Republic of China
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- Feng Rao
- Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, , Shanghai 200050, People’s Republic of China
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- Yuefeng Gong
- Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, , Shanghai 200050, People’s Republic of China
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- Songlin Feng
- Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, , Shanghai 200050, People’s Republic of China
書誌事項
- 公開日
- 2009-06-15
- DOI
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- 10.1063/1.3156824
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Combination of phase change and resistive change was proposed to achieve multistate storage in one cell and Ge2Sb2Te5 (GST)/tungsten oxide (WOx) stack was fabricated. In reset process, three resistance staircases were observed, corresponding to the device transition from low-resistance-state (LRS) to a medium-resistance-state (MRS) first, and then transition from the MRS to high-resistance-state (HRS). In set process, two S-shaped negative-differential-resistances were observed, corresponding to the device transition from HRS to MRS first, and then transition from MRS to LRS. The GST/WOx architecture with successive phase change and resistive change is considered to have potential for multistate storage.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 94 (24), 243115-, 2009-06-15
AIP Publishing