Dry process technology (reactive ion etching)
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- James A. Bondur
- IBM System Products Division, East Fishkill, Hopewell Junction, New York 12533
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Description
<jats:p>Dry process technology represents a new and exciting technique for defining images in insulators, semiconductors, and metals. It is attractive for application in the semiconductor industry because it results in increased dimensional and shape control for etched images. In addition, it represents a potentially less expensive process which is inherently safer for the people involved. Several different plasma etch system configurations are available for experimentation. Each has unique capabilities for different films. The different equipment configurations are described, including their ability to etch particular films, and the effects of the process on the etched image formed. Information is presented on other halogenated gases that may have potential application as a part of the dry process technology. Since experimental evidence is not available to explain the mechanisms involved in this technology, the published information speculating as to whether radicals, ions, or neutrals are responsible for etching are reviewed.</jats:p>
Journal
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- Journal of Vacuum Science and Technology
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Journal of Vacuum Science and Technology 13 (5), 1023-1029, 1976-09-01
American Vacuum Society
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Details 詳細情報について
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- CRID
- 1363388844793871232
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- NII Article ID
- 30020329657
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- NII Book ID
- AA10635514
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- DOI
- 10.1116/1.569054
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- ISSN
- 00225355
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- Data Source
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- Crossref
- CiNii Articles