Oxidation Behavior of Silicon Carbide

DOI Web Site Web Site 被引用文献2件

書誌事項

公開日
1958-09
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1111/j.1151-2916.1958.tb12932.x
公開者
Wiley

この論文をさがす

説明

<jats:p> The oxidation of purified green silicon carbide in controlled atmospheres was studied by weight‐gain measurement and by observation of the surface reaction products, including optical measurement of the thickness of the oxide surface film. The rate of oxidation was much greater for silicon carbide in contact with fluid silicate glasses than for silicon carbide alone. In a vacuum of 0.1 mm., oxidation proceeded with loss of weight, because of the formation of volatile SiO <jats:sub>2</jats:sub> , and at a greater rate than at atmospheric pressure. It is postulated that the rate‐controlling process in the normal oxidation of silicon carbide is the formation of solid SiO <jats:sub>2</jats:sub> on the surface. </jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

問題の指摘

ページトップへ