Electric field forced phase switching in La-modified lead zirconate titanate stannate thin films

DOI PDF 被引用文献2件
  • K. G. Brooks
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • J. Chen
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • K. R. Udayakumar
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • L. E. Cross
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802

書誌事項

公開日
1994-02-01
DOI
  • 10.1063/1.356357
公開者
AIP Publishing

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説明

<jats:p>Electric field forced antiferroelectric to ferroelectric phase switching has been demonstrated in thin films of Pb0.97La0.02(Zr,Ti,Sn)O3 perovskites for the first time. Several compositions in the tetragonal antiferroelectric phase field of this system were prepared in thin film form by a sol-gel technique. Forward and reverse switching threshold fields of 27–103 kV/cm and 18–62 kV/cm, respectively, were determined from polarization-electric field hysteresis and incremental capacitance data. Switching times as fast as 300 ns were recorded for one of the antiferroelectric compositions. An electric field induced longitudinal strain of 0.16% was measured for a film of composition (Pb0.97La0.02)(Zr0.60Ti0.10Sn0.30)O3 using a laser ultradilatometer. These films are candidate materials for high charge storage integrated capacitors and microelectromechanical devices requiring large nonlinear strain response.</jats:p>

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