SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

DOI PDF 被引用文献2件

書誌事項

公開日
2012-05-14
権利情報
  • https://www.scientific.net/PolicyAndEthics/PublishingPolicies
  • https://www.scientific.net/license/TDM_Licenser.pdf
DOI
  • 10.4028/www.scientific.net/msf.717-720.75
公開者
Trans Tech Publications, Ltd.

説明

<jats:p>Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Growth rates of 20 micron/hr and short <2 hr fixed-cycle times (including rapid heat-up and cool-down ramps), while maintaining desirable epitaxial layer quality were achieved. No significant change in 150 mm diameter wafer shape is observed upon epitaxial growth consistent with good-quality, low-stress substrates and low (<5°C) cross-wafer epitaxial reactor temperature variation. Specular epitaxial layer morphology was obtained, with morphological defect densities consistent with projected 5x5 mm die yields as high as 80% and surface roughness, Ra, of 0.3 nm. Intrawafer thickness uniformity is good, averaging only 1.6% and within a run wafer-to-wafer thickness variation is 2.7%. N-type background doping densities less that 1E14 cm-3 have been measured by CV. Doping uniformity and wafer-to-wafer variation currently average ~12% requiring further improvement. The first 100 m thick 150-mm diameter epitaxial growths are reported.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ