Inserting one single Mn ion into a quantum dot

Laurent Maingault, L. Besombes, Y. Léger, C. Bougerol, H. Mariette

doi:10.1063/1.2387116

Inserting one single Mn ion into a quantum dot

DOI PDF 被引用文献1件

Laurent Maingault

Université Joseph Fourier Grenoble CEA-CNRS-UJF Group Nanophysics and Semiconductor, Laboratoire de Spectrométrie Physique, , BP 87, 38402 St Martin d’Hères, France and , 17 Av. des Martyrs, 38000 Grenoble, France
L. Besombes

Université Joseph Fourier Grenoble CEA-CNRS-UJF Group Nanophysics and Semiconductor, Laboratoire de Spectrométrie Physique, , BP 87, 38402 St Martin d’Hères, France and , 17 Av. des Martyrs, 38000 Grenoble, France
Y. Léger

Université Joseph Fourier Grenoble CEA-CNRS-UJF Group Nanophysics and Semiconductor, Laboratoire de Spectrométrie Physique, , BP 87, 38402 St Martin d’Hères, France and , 17 Av. des Martyrs, 38000 Grenoble, France
C. Bougerol

Université Joseph Fourier Grenoble CEA-CNRS-UJF Group Nanophysics and Semiconductor, Laboratoire de Spectrométrie Physique, , BP 87, 38402 St Martin d’Hères, France and , 17 Av. des Martyrs, 38000 Grenoble, France
H. Mariette

Université Joseph Fourier Grenoble CEA-CNRS-UJF Group Nanophysics and Semiconductor, Laboratoire de Spectrométrie Physique, , BP 87, 38402 St Martin d’Hères, France and , 17 Av. des Martyrs, 38000 Grenoble, France

抄録

<jats:p>A method of growth to get one single Mn in self-assembled semiconductor quantum dot is presented. With a simple quantitative model, the appropriate low Mn density needed prior to the quantum dot nucleation is estimated. Such a low Mn concentration was reached by inserting a thin ZnTe spacer between a Zn1−xMnxTe buffer and the CdTe quantum dot layer. The control of Mn density is made by changing the thickness of the ZnTe spacer, with good reproducibility. Qualitative and quantitative comparisons of optical spectra for different samples assess the relevance of this growth method.</jats:p>