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- Hiroto Maeda
- National Institute of Advanced Industrial Science and Technology Tsukuba West
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- Ryuichi Takanabe
- National Institute of Advanced Industrial Science and Technology Tsukuba West
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- Atsunori Takeda
- National Institute of Advanced Industrial Science and Technology Tsukuba West
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- Syogo Matsuda
- National Institute of Advanced Industrial Science and Technology Tsukuba West
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- Tomohisa Kato
- National Institute of Advanced Industrial Science and Technology Tsukuba West
書誌事項
- 公開日
- 2014-02-26
- 権利情報
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- https://www.scientific.net/PolicyAndEthics/PublishingPolicies
- https://www.scientific.net/license/TDM_Licenser.pdf
- DOI
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- 10.4028/www.scientific.net/msf.778-780.771
- 公開者
- Trans Tech Publications, Ltd.
説明
<jats:p>Development of high efficient and high accuracy slice processing technology is required for realizing the high quality and low cost large SiC wafer. Our target of high speed slicing is slicing a 6 inch SiC single crystal ingot in about 9 hours. This slicing speed is about 10 times higher than the loose abrasive slurry sawing and about 4 times higher than the current technology of diamond wire sawing. The slicing speed and the slicing accuracy are in the relationship of trade-off. Therefore, in this research, we have studied the high speed slicing technique of 3 inch and 4 inch SiC single crystal ingot aiming at reduction of sliced wafers SORI. Moreover, we have extracted subjects to scale-up for the high speed slicing of the 6 inch SiC single crystal ingot.</jats:p>
収録刊行物
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- Materials Science Forum
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Materials Science Forum 778-780 771-775, 2014-02-26
Trans Tech Publications, Ltd.