Low-temperature transport properties of the mixed-valence semiconductor Ru0.5Pd0.5Sb3

DOI PDF 被引用文献1件
  • G. S. Nolas
    Research and Development Division, Marlow Industries, Dallas, Texas 75238
  • V. G. Harris
    Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375
  • T. M. Tritt
    Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375
  • G. A. Slack
    Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180

書誌事項

公開日
1996-12-01
DOI
  • 10.1063/1.363707
公開者
AIP Publishing

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説明

<jats:p>We have measured the transport properties of Ru0.5Pd0.5Sb3 from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb3 and IrSb3. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru4+- and Ru2+-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed.</jats:p>

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