Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy
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- Min-Ho Kwon
- Seoul National University School of Materials Science and Engineering, , Seoul 151-742, Korea
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- Bong-Sub Lee
- University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, , 1101 W. Springfield Ave., Urbana, Illinois 61801 and Coordinated Science Laboratory, , 1308 West Main Street, Urbana, Illinois 61801
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- Stephanie N. Bogle
- University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, , 1101 W. Springfield Ave., Urbana, Illinois 61801 and Coordinated Science Laboratory, , 1308 West Main Street, Urbana, Illinois 61801
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- Lakshmi N. Nittala
- University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, , 1101 W. Springfield Ave., Urbana, Illinois 61801 and Coordinated Science Laboratory, , 1308 West Main Street, Urbana, Illinois 61801
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- Stephen G. Bishop
- University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, , 1101 W. Springfield Ave., Urbana, Illinois 61801 and Coordinated Science Laboratory, , 1308 West Main Street, Urbana, Illinois 61801
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- John R. Abelson
- University of Illinois at Urbana-Champaign Department of Materials Science and Engineering, , 1101 W. Springfield Ave., Urbana, Illinois 61801 and Coordinated Science Laboratory, , 1308 West Main Street, Urbana, Illinois 61801
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- Simone Raoux
- IBM Almaden Research Center , 650 Harry Road, San Jose, California 95120
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- Byung-ki Cheong
- Korea Institute of Science and Technology Thin Film Materials Research Center, , Seoul 136-791, Korea
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- Ki-Bum Kim
- Seoul National University School of Materials Science and Engineering, , Seoul 151-742, Korea
書誌事項
- 公開日
- 2007-01-08
- DOI
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- 10.1063/1.2430067
- 公開者
- AIP Publishing
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説明
<jats:p>The phase change material Ge2Sb2Te5 is widely investigated for use in nonvolatile memories. It has been reported that the crystallization speed depends on the thermal history, indicating that structural differences exist between amorphous states. The authors apply fluctuation electron microscopy to quantify differences in the nanometer-scale structural order between several amorphous states of Ge2Sb2Te5. All as-deposited films are found to contain ordered regions. Thermal annealing below the crystallization threshold increases the nanoscale order, and such samples crystallize slightly more rapidly. The authors hypothesize that the nanoscale ordered regions act as the nuclei for crystallization, with the largest regions being the most significant.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 90 (2), 021923-, 2007-01-08
AIP Publishing