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- Ferdinando Iucolano
- CNR-IMM , Stradale Primosole 50, 95121 Catania, Italy
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- Fabrizio Roccaforte
- CNR-IMM , Stradale Primosole 50, 95121 Catania, Italy
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- Filippo Giannazzo
- CNR-IMM , Stradale Primosole 50, 95121 Catania, Italy
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- Vito Raineri
- CNR-IMM , Stradale Primosole 50, 95121 Catania, Italy
書誌事項
- 公開日
- 2007-02-26
- DOI
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- 10.1063/1.2710770
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>In this letter, a correlation between the nanoscale localized electrical properties of the Pt∕GaN Schottky barrier and the temperature behavior of macroscopic Schottky diodes is demonstrated. Although a significant improvement of the ideality factor of the diodes is achieved after annealing at 400°C, local current-voltage measurements, performed with a biased tip of a conductive atomic force microscope, revealed the inhomogeneous nature of the barrier. Its nanoscale degree of homogeneity was quantitatively described by means of Tung’s model [Phys. Rev. B 45, 13509 (1992)], allowing the authors to explain the temperature dependence of the electrical characteristics of the macroscopic diodes.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 90 (9), 092119-, 2007-02-26
AIP Publishing