Direct Observation of the Structural Component of the Metal−Insulator Phase Transition and Growth Habits of Epitaxially Grown VO<sub>2</sub> Nanowires
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- Jung Inn Sohn
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Heung Jin Joo
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Alexandra E. Porter
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Chel-Jong Choi
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Kinam Kim
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Dae Joon Kang
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
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- Mark E. Welland
- Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, Korea, Future Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea, BK 21 Physics Research Division, SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Korea
書誌事項
- 公開日
- 2007-05-18
- DOI
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- 10.1021/nl070439q
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- Nano Letters
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Nano Letters 7 (6), 1570-1574, 2007-05-18
American Chemical Society (ACS)