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- Dingqu Wang
- Tsinghua University State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, , Beijing 100084, China
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- Rong Zhu
- Tsinghua University State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, , Beijing 100084, China
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- Zhaoying Zhou
- Tsinghua University State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, , Beijing 100084, China
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- Xiongying Ye
- Tsinghua University State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments and Mechanology, , Beijing 100084, China
書誌事項
- 公開日
- 2007-03-05
- DOI
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- 10.1063/1.2711756
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A structure similar to a field effect transistor with two isolated top electrodes comprising the source and drain and a lower substrate electrode as the gate was used for the dielectrophoresis-based assembly of zinc oxide nanowires. The results reveal that the assembly of nanowires is significantly affected by the gap distance between the two top electrodes as well as the magnitude and frequency of the applied electric field. Gate assisted assemblies using direct current and alternating current dielectrophoresis were also investigated and determined to improve the assembly effect of nanowires.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 90 (10), 2007-03-05
AIP Publishing