Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical p–n Heterojunctions
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- Siwen Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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- Junchi Wu
- CAS Center for Excellence in Nanoscience and CAS Key Laboratory of Mechanical Behavior and Design of Materials University of Science and Technology of China Hefei 230026 P. R. China
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- Ke Jin
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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- Huaiyi Ding
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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- Taishen Li
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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- Changzheng Wu
- CAS Center for Excellence in Nanoscience and CAS Key Laboratory of Mechanical Behavior and Design of Materials University of Science and Technology of China Hefei 230026 P. R. China
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- Nan Pan
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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- Xiaoping Wang
- Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 P. R. China
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<jats:title>Abstract</jats:title><jats:p>The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high‐performance electronic and optoelectronic devices. In this study, a vertical p–n diode is constructed by vertically stacking p‐type few‐layer black phosphorus (BP) on n‐type few‐layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate‐modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization‐sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero‐bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP‐based devices. The results pave the way for the implementation of p‐BP/n‐InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization‐sensitive applications.</jats:p>
収録刊行物
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- Advanced Functional Materials
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Advanced Functional Materials 28 (34), 2018-06-26
Wiley
