書誌事項
- 公開日
- 2013-09
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/j.susc.2013.04.012
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract Zirconium diboride has been proposed as a viable substrate for epitaxial growth of group III nitrides. In many methods of nitride growth on ZrB2 surfaces, ammonia gas is the nitrogen source. Here we use X-ray photoelectron spectroscopy at a series of fixed temperatures from room temperature to 535 °C and density functional theory to study the dissociative adsorption of ammonia on the ZrB2(0001) surface. A significant increase is observed between ~ 250 and ~ 400 °C for the deposition of nitrogen, which can be desorbed by annealing between 950 and 1150 °C. Two components of the N 1s peak are observed and are associated with bonding of nitrogen to boron or to zirconium. Comparison of spectra obtained at two different emission angles suggests that more N is bonded to B than to Zr at the surface and when boron is bonded to nitrogen, it migrates towards the surface. This may be a factor in limiting group III nitride epitaxial growth on the ZrB2(0001) surface.
収録刊行物
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- Surface Science
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Surface Science 615 110-118, 2013-09
Elsevier BV