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- B. Bora
- Departamento de Plasma Termonuclear, Comisión Chilena de Energía Nuclear (CCHEN) 1 , Casilla 188-D, Santiago, Chile
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- H. Bhuyan
- Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
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- M. Favre
- Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
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- E. Wyndham
- Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
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- C. S. Wong
- Plasma Technology Research Centre, Physics Department, Faculty of Science, University of Malaya 3 , 50603 Kuala Lumpur, Malaysia
書誌事項
- 公開日
- 2013-04-16
- DOI
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- 10.1063/1.4801874
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>On the basis of the global model, the influences of driving voltage and frequency on electron heating in geometrically symmetrical dual capacitively coupled radio frequency plasma have been investigated. Consistent with the experimental and simulation results, non-monotonic behavior of dc self bias and plasma heating with increasing high frequency is observed. In addition to the local maxima of plasma parameters for the integer values of the ratio between the frequencies (ξ), ourstudies also predict local maxima for odd integer values of 2ξ as a consequence of the electrical asymmetry effect produced by dual frequency voltage sources.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 113 (15), 153301-, 2013-04-16
AIP Publishing