Dual radio frequency plasma source: Understanding via electrical asymmetry effect

  • B. Bora
    Departamento de Plasma Termonuclear, Comisión Chilena de Energía Nuclear (CCHEN) 1 , Casilla 188-D, Santiago, Chile
  • H. Bhuyan
    Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
  • M. Favre
    Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
  • E. Wyndham
    Departamento de Fisica, Pontificia Universidad Catolica de Chile 2 , Casilla 306, Santiago 22, Chile
  • C. S. Wong
    Plasma Technology Research Centre, Physics Department, Faculty of Science, University of Malaya 3 , 50603 Kuala Lumpur, Malaysia

書誌事項

公開日
2013-04-16
DOI
  • 10.1063/1.4801874
公開者
AIP Publishing

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説明

<jats:p>On the basis of the global model, the influences of driving voltage and frequency on electron heating in geometrically symmetrical dual capacitively coupled radio frequency plasma have been investigated. Consistent with the experimental and simulation results, non-monotonic behavior of dc self bias and plasma heating with increasing high frequency is observed. In addition to the local maxima of plasma parameters for the integer values of the ratio between the frequencies (ξ), ourstudies also predict local maxima for odd integer values of 2ξ as a consequence of the electrical asymmetry effect produced by dual frequency voltage sources.</jats:p>

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