Impact ionization and positive charge formation in silicon dioxide films on silicon

DOI PDF 被引用文献1件
  • D. J. DiMaria
    IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
  • D. Arnold
    IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
  • E. Cartier
    IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

書誌事項

公開日
1992-04-27
DOI
  • 10.1063/1.107081
公開者
AIP Publishing

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説明

<jats:p>Positive charge formation and its possible relationship to impact ionization in silicon dioxide have been controversial issues for many years. In this study, band-gap ionization due to the development of a high-energy tail in the hot-electron energy distribution is shown to occur in films thicker than 20.0 nm at fields higher than 7 MV/cm. This process is demonstrated to ‘‘directly’’ account for hole currents in the substrate circuit of n-channel field-effect transistors and for the observation of positively trapped charges accumulating at the substrate-silicon/silicon-dioxide interface at low injected-carrier fluences (less than 0.001 C/cm2) before the onset of trap creation.</jats:p>

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