Thermoelectric study of crossroads material MnTe via sulfur doping

DOI PDF 被引用文献5件
  • Wenjie Xie
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland
  • Sascha Populoh
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland
  • Krzysztof Gałązka
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland
  • Xingxing Xiao
    Institute for Materials Science, University of Stuttgart 3 , DE-70569 Stuttgart, Germany
  • Leyre Sagarna
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland
  • Yufei Liu
    Department of Physics and Astronomy, Clemson University 4 , Clemson, South Carolina 29634-0978, USA
  • Matthias Trottmann
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland
  • Jian He
    Department of Physics and Astronomy, Clemson University 4 , Clemson, South Carolina 29634-0978, USA
  • Anke Weidenkaff
    Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis 1 , Uberlandstrasse 129, CH-8600 Dübendorf, Switzerland

書誌事項

公開日
2014-03-14
DOI
  • 10.1063/1.4868584
公開者
AIP Publishing

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<jats:p>Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe1-xSx samples with nominal S content of x = 0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe1-xSx samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300 K to 773 K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe0.9S0.1 was substantially enhanced over the pristine sample near 400 K, while the improvement of ZT became marginal at elevated temperatures. A ZT ∼ 0.65 at 773 K was obtained in all three samples.</jats:p>

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