Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light‐Emitting Diodes
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- Moon Kee Choi
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Jiwoong Yang
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Dong Chan Kim
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Zhaohe Dai
- Center for Mechanics of Solids, Structures and Materials Department of Aerospace Engineering and Engineering Mechanics Department of Biomedical Engineering Texas Materials Institute University of Texas at Austin Austin TX 78712 USA
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- Junhee Kim
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Hyojin Seung
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Vinayak S. Kale
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Sae Jin Sung
- Research Institute of Advanced Materials Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
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- Chong Rae Park
- Research Institute of Advanced Materials Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
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- Nanshu Lu
- Center for Mechanics of Solids, Structures and Materials Department of Aerospace Engineering and Engineering Mechanics Department of Biomedical Engineering Texas Materials Institute University of Texas at Austin Austin TX 78712 USA
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- Taeghwan Hyeon
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
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- Dae‐Hyeong Kim
- Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea
説明
<jats:title>Abstract</jats:title><jats:p>Displaying information on transparent screens offers new opportunities in next‐generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see‐through” displays to show vivid images over clear background view. Here transparent quantum dot light‐emitting diodes (Tr‐QLEDs) are reported with high brightness (bottom: ≈43 000 cd m<jats:sup>−2</jats:sup>, top: ≈30 000 cd m<jats:sup>−2</jats:sup>, total: ≈73 000 cd m<jats:sup>−2</jats:sup> at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr‐QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr‐QLEDs (513 pixels in.<jats:sup>−1</jats:sup>) shows the potential of the full‐color transparent display.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 30 (1), 2017-10-25
Wiley
