Surface cesium concentrations in cesium-ion-bombarded elemental and compound targets

DOI PDF 被引用文献1件
  • J. E. Chelgren
    Materials Research Laboratory and School of Chemical Sciences,
  • W. Katz
    Materials Research Laboratory and School of Chemical Sciences,
  • V. R. Deline
    Materials Research Laboratory and School of Chemical Sciences,
  • C. A. Evans
    Materials Research Laboratory and School of Chemical Sciences,
  • R. J. Blattner
    Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
  • P. Williams
    Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

書誌事項

公開日
1979-03-01
DOI
  • 10.1116/1.569939
公開者
American Vacuum Society

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説明

<jats:p>Auger electron spectrometry has been used to characterize the atomic cesium concentration [Cs]a at the surface of cesium ion bombarded silicon and various metal silicides. The Si− ion yield was found to be proportional to [Cs]v2.8±0.1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S−1 of the substrate. Deviations from a linear dependence of [Cs]v on S−1 are ascribed to differential sputtering effects.</jats:p>

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