Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

DOI Web Site 3 Citations

S.A. Blokhin

Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin, 10623, Federal Republic of Germany
J.A. Lott

VI Systems GmbH, Hardenbergstrasse 7, Berlin, 10623, Federal Republic of Germany
A. Mutig

Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin, 10623, Federal Republic of Germany
G. Fiol

Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin, 10623, Federal Republic of Germany
N.N. Ledentsov

VI Systems GmbH, Hardenbergstrasse 7, Berlin, 10623, Federal Republic of Germany
M.V. Maximov

A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg, 194021, Russian Federation
A.M. Nadtochiy

Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin, 10623, Federal Republic of Germany
V.A. Shchukin

VI Systems GmbH, Hardenbergstrasse 7, Berlin, 10623, Federal Republic of Germany
D. Bimberg

Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin, 10623, Federal Republic of Germany

Journal

Electronics Letters

Electronics Letters 45 (10), 501-503, 2009-05-07

Institution of Engineering and Technology (IET)

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