High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique
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- Se Hyun Kim
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Danbi Choi
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Dae Sung Chung
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Chanwoo Yang
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Jaeyoung Jang
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Chan Eon Park
- Pohang University of Science and Technology 1 POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, , Pohang 790-784, Republic of Korea
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- Sang-Hee Ko Park
- Electronics and Telecommunications Research Institute 2 Transparent Electronics Team, , Daejeon 305-350, Republic of Korea
説明
<jats:p>To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm2 V−1 s−1, a substhreshold swing of 0.738 V/decade and an on/off ratio of 107. Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 93 (11), 113306-, 2008-09-15
AIP Publishing
