High <i>Ion</i>/<i>Ioff</i> and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

DOI PDF 被引用文献10件
  • Munetaka Noguchi
    The University of Tokyo 1 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • SangHyeon Kim
    The University of Tokyo 1 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Masafumi Yokoyama
    The University of Tokyo 1 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Osamu Ichikawa
    CREST, JST 2 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Takenori Osada
    CREST, JST 2 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Masahiko Hata
    CREST, JST 2 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Mitsuru Takenaka
    The University of Tokyo 1 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shinichi Takagi
    The University of Tokyo 1 , 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

書誌事項

公開日
2015-07-28
DOI
  • 10.1063/1.4927265
公開者
AIP Publishing

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説明

<jats:p>We have demonstrated the operation of high on-off current ratio (Ion/Ioff) and low subthreshold slope planar-type InGaAs tunnel field effect transistors (TFETs) with Zn-diffused source junctions. The solid-phase Zn diffusion process has been shown to form defect-less p+/n source junctions with steep profiles because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The devices presented in this paper have exhibited a record low subthreshold slope of 64 mV/dec for planar-type III-V TFETs and a large Ion/Ioff ratio of more than 106 at the same time.</jats:p>

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