Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap

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  • Sandhya Susarla
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Alex Kutana
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Jordan A. Hachtel
    Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
  • Vidya Kochat
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Amey Apte
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Robert Vajtai
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Boris I. Yakobson
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Juan Carlos Idrobo
    Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
  • Chandra Sekhar Tiwary
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA
  • Pulickel M. Ajayan
    Materials Science and Nano Engineering Rice University Houston TX 77005 USA

書誌事項

公開日
2017-07-14
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#am
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adma.201702457
公開者
Wiley

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説明

<jats:p>Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mo<jats:italic><jats:sub>x</jats:sub></jats:italic>W<jats:sub>1−</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>S<jats:sub>2</jats:sub><jats:italic><jats:sub>y</jats:sub></jats:italic>Se<jats:sub>2(1−</jats:sub><jats:italic><jats:sub>y</jats:sub></jats:italic><jats:sub>)</jats:sub> is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.</jats:p>

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