Ferromagnetic Order at Room Temperature in Monolayer WSe<sub>2</sub> Semiconductor via Vanadium Dopant

Seok Joon Yun, Dinh Loc Duong, Doan Manh Ha, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young‐Min Kim, Young Hee Lee

doi:10.1002/advs.201903076

<jats:title>Abstract</jats:title><jats:p>Diluted magnetic semiconductors including Mn‐doped GaAs are attractive for gate‐controlled spintronics but Curie transition at room temperature with long‐range ferromagnetic order is still debatable to date. Here, the room‐temperature ferromagnetic domains with long‐range order in semiconducting V‐doped WSe<jats:sub>2</jats:sub> monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ≈10<jats:sup>5</jats:sup> at 0.1% V‐doping concentration. The V‐substitution to W sites keeps a V–V separation distance of 5 nm without V–V aggregation, scrutinized by high‐resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back‐gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.</jats:p>

Ferromagnetic Order at Room Temperature in Monolayer WSe<sub>2</sub> Semiconductor via Vanadium Dopant

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