-
- Holger von Wenckstern
- Universität Leipzig Fakultät für Physik und Geowissenschaften Felix‐Bloch‐Institut für Festkörperphysik Linnéstrasse 5 04103 Leipzig Germany
書誌事項
- 公開日
- 2017-07-04
- 権利情報
-
- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
-
- 10.1002/aelm.201600350
- 公開者
- Wiley
この論文をさがす
説明
<jats:p>The group‐III sesquioxides possess material properties that render them interesting for applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter‐sub‐band infrared detectors. Technology for growing large, single‐crystalline bulk material and for wafer fabrication exists, enabling homoepitaxial growth of thin films with high crystalline quality. The bandgap can be tuned in an energy range from about 4 to 8 eV for the ternary alloys and allows growth of heterostructures with large band offset. Here, past results and recent investigations on the growth, the material properties, contact fabrication and the alloying of group‐III sesquioxides are reviewed, and an overview on demonstrator devices is provided.</jats:p>
収録刊行物
-
- Advanced Electronic Materials
-
Advanced Electronic Materials 3 (9), 2017-07-04
Wiley