Effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs substrates

  • T. Yano
    Hokkaido University Division of Electronics for Informatics, , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • T. Uemura
    Hokkaido University Division of Electronics for Informatics, , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • K.-i. Matsuda
    Hokkaido University Division of Electronics for Informatics, , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • M. Yamamoto
    Hokkaido University Division of Electronics for Informatics, , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan

書誌事項

公開日
2007-03-15
DOI
  • 10.1063/1.2712164
公開者
AIP Publishing

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説明

<jats:p>The effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al (CCFA) thin films epitaxially grown on GaAs substrates by sputtering was investigated. When the MgO interlayer thickness was 1.0nm or less, the CCFA films were grown with a cube-on-cube relation to GaAs and no significant decrease in either the x-ray diffraction intensity or saturation magnetization was observed. In contrast, when the MgO thickness was 1.5nm or more, the CCFA film was rotated by 45° in the (001) plane with respect to GaAs, and both the x-ray diffraction intensity and saturation magnetization decreased. All samples showed strong magnetic anisotropy, in which a uniaxial anisotropy with an easy axis of [110]GaAs or [1−10]GaAs dominated with a slight cubic anisotropy having an easy axis of ⟨110⟩CCFA superimposed.</jats:p>

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