New method for determining flat-band voltage in high mobility semiconductors

DOI PDF 被引用文献2件
  • Roy Winter
    Department of Materials Science and Engineering, Technion-Israel Institute of Technology , Haifa 32000, Israel
  • Jaesoo Ahn
    Department of Materials Science and Engineering, Stanford University , Stanford, California 94305
  • Paul C. McIntyre
    Department of Materials Science and Engineering, Stanford University , Stanford, California 94305
  • Moshe Eizenberg
    Department of Materials Science and Engineering, Technion-Israel Institute of Technology , Haifa 32000, Israel

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<jats:p>The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance–voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and CFB. The method is based on the point of inflection in the capacitance–voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.</jats:p>

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