Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
書誌事項
- 公開日
- 2001
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
-
- 10.1109/16.954476
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
-
- IEEE Transactions on Electron Devices
-
IEEE Transactions on Electron Devices 48 (10), 2348-2356, 2001
Institute of Electrical and Electronics Engineers (IEEE)