Electrical properties of vacuum-deposited indium oxide and indium tin oxide films

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書誌事項

公開日
1980-07
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/0040-6090(80)90415-0
公開者
Elsevier BV

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Abstract Indium oxide films were deposited onto soda-lime glass substrates. The lowest resistivity found for indium tin oxide (ITO) films was 2 × 10 −4 Ω cm with a carrier density ne of 1 × 1021 cm−3 and a mobility μH of 30 cm2 V−1 s−1 at the optimized doping level (5 wt.%) and substrate temperature (400 °C), whereas it was 4 × 10 −4 Ω cm with ne = 4 × 1020 cm−3 and μH = 72 cm2 V−1 s−1 for pure indium oxide films. The characteristic features of ITO films are their high carrier density and low mobility in comparison with ordinary electron-beam-deposited ITO films. It was determined from thermal stability tests that the contribution to the carrier density made by the addition of tin was at most (3–4) × 1020 cm−3; i.e. the efficiency of generation of free carriers by the addition of tin is only a few tens of per cent.

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