-
- C. F. Lo
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
-
- C. Y. Chang
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
-
- B. H. Chu
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
-
- H.-Y. Kim
- Korea University Department of Chemical and Biological Engineering, , Seoul 136-701, Korea
-
- J. Kim
- Korea University Department of Chemical and Biological Engineering, , Seoul 136-701, Korea
-
- David A. Cullen
- Arizona State University Department of Physics, , Tempe, Arizona 85287
-
- Lin Zhou
- Arizona State University Department of Physics, , Tempe, Arizona 85287
-
- David. J. Smith
- Arizona State University Department of Physics, , Tempe, Arizona 85287
-
- S. J. Pearton
- University of Florida Department of Materials Science and Engineering, , Gainesville, Florida 32611
-
- Amir Dabiran
- SVT Associates , Eden Prairie, Minnesota 55344
-
- B. Cui
- SVT Associates , Eden Prairie, Minnesota 55344
-
- P. P. Chow
- SVT Associates , Eden Prairie, Minnesota 55344
-
- S. Jang
- Dankook University Department of Chemical Engineering, , Yongin 448-701, Korea
-
- F. Ren
- University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611
書誌事項
- 公開日
- 2010-08-31
- DOI
-
- 10.1116/1.3482335
- 公開者
- American Vacuum Society
この論文をさがす
説明
<jats:p>AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2×1011 protons/cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.</jats:p>
収録刊行物
-
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
-
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (5), L47-L51, 2010-08-31
American Vacuum Society