First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well

DOI PDF 被引用文献18件
  • L. C. West
    Ginzton Laboratory, Stanford University, Stanford, California 94305 and Lawrence Livermore National Laboratory, P. O. Box 808 L-278, Livermore, California 94550
  • S. J. Eglash
    Hewlett–Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 and Stanford Electronics Laboratories, Stanford University, Stanford, California 94305

書誌事項

公開日
1985-06-15
DOI
  • 10.1063/1.95742
公開者
AIP Publishing

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説明

<jats:p>A new type of optical transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption for two structures with 65-Å-thick- and 82-Å-thick wells. The transitions exhibit resonant energies of 152 and 121 meV respectively, full width at half-maximum linewidths as narrow as 10 meV at room temperature, and an oscillator strength of 12.2. The material is anticipated to have subpicosecond relaxation times and be ideal for low-power optical digital logic.</jats:p>

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