Novel voltage controlled MRAM (VCM) with fast read/write circuits for ultra large last level cache
説明
This paper presents voltage controlled MRAM (VCM) with novel fast read/write circuits for nonvolatile ultra-large last level cache. Further, write error rate has dramatically been reduced by thermal stability factor control using “continuous read-write-verify” scheme. Read error rate has also improved with “read-disturb-free non-destructive-self-reference read” with unipolar write of VCM.
収録刊行物
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- 2016 IEEE International Electron Devices Meeting (IEDM)
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2016 IEEE International Electron Devices Meeting (IEDM) 27.5.1-27.5.4, 2016-12
IEEE